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IPB025N10N3G Dataheets PDF



Part Number IPB025N10N3G
Manufacturers Infineon
Logo Infineon
Description MOSFET
Datasheet IPB025N10N3G DatasheetIPB025N10N3G Datasheet (PDF)

OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Extremely low on-resistance R DS(on) • High current capability • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 Type IPB025N10N3 G IPB025N10N3 G Product Summary V DS R DS(on),max ID 100 V 2.5 mΩ 180 A Package Marking PG-TO263-7 025N10N Maximum ratings, at T j=.

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OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Extremely low on-resistance R DS(on) • High current capability • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 Type IPB025N10N3 G IPB025N10N3 G Product Summary V DS R DS(on),max ID 100 V 2.5 mΩ 180 A Package Marking PG-TO263-7 025N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=100 A, R GS=25 Ω Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) See figure 3 Value 180 167 720 1000 ±20 300 -55 ... 175 55/175/56 Unit A mJ V .


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