CJD04N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-2516Plastic-Encapsulate MOSFETS CJD04N60 600V N-Channel Power MOSFET V(BR)DSS 600V RDS(on)MAX   3.0Ω@10V ID 4A TO-251S   General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE 2. DRAIN 3. SOURCE 1 23 FEATURE z High Current Rating z Lower Rds(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified MARKING EQUIVALENT CIRCUIT CJD044N60 z XXX CJD04N60 = Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuou...