CJM1206

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1206 P-Channel Power MOSFET DFNWB2*2-6L-J V(BR)DSS -12V RDS(on)MAX 45 mΩ@-4.5V  60 mΩ@-2.5V 90 mΩ@-1.8V ID -6A  1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The CJM1206 uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltage. . This device is suitable for use as a load switching application and a wide variety of other applications. FEATURES  Advanced trench MOSFET process technology  Ultra low on-resistance with low gate charge 0$5.,1* APPLICATIONS  PWM application  Load switch  Battery charge in cellular handset Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID...