CJP80N04

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP80N04 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID   7mΩ@10V  40 V 80A 20mΩ@4.5V   DESCRIPTION The CJP80N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. TO-220-3L-C 1. GATE 2. DRAIN 3. SOURCE 123 FEATURES z High density cell design for ultra low RDS(ON) z Fully characterized Avalanche voltage and current z Good stability and uniformity with high EAS APPLICATIONS z Power switching application z Hard switched and high frequency circuits z Excellent package for good heat dissipation z Special process technology for high ESD capability z Uninterruptible Power Supply MARKING EQUIV ALENT CIRCUIT CJP8N XXX CJP80N04= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Drain-Source V...