N-Channel Power MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L-C Plastic-Encapsulate MOSFETS
CJP85N80 N-Channel Power MOS...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L-C Plastic-Encapsulate MOSFETS
CJP85N80 N-Channel Power MOSFET
V(BR)DSS
85V
RDS(on)MAX
8.5mΩ@10V
ID
80A
DESCRIPTION The CJP85N80 uses advanced trench technology and design to
provide excellent RDS(on) with low gate charge. Good stability and uniformity with high EAS .This device is suitable for use in PWM, load switching and general purpose applications.
TO-220-3L-C
1. GATE 2. DRAIN
FEATURE Advanced trench process technology Special designed for convertors and power controls High density cell design for ultra low RDS(on) Fully characterized avalanche voltage and current Fast switching Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability
3. SOURCE 1 2 3
APPLICATION Power switching application Hard switched and high frequency circuits Uninterruptible power supply
MARKING
EQUIV ALENT CIR...
Similar Datasheet