CJQ4406

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4406 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX   12mΩ@10V  30 V 16mΩ@4.5V   ID 10A DESCRIPTION The CJQ4406 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. APPLICATIONS z High side switch in SMPS z Load Switch SOP8 MARKING Front side Q4406= Device code Solid dot=Pin1 indicator Solid dot = Green molding compound device, if none, the normal device YY=Date Code MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Drain-Source Voltage Parameter Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) (1).EAS condition: VDD=50V,L=0.5mH, RG=25...