CJQ4438

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4438 N-Channel MOSFET V(BR)DSS 60 V RDS(on)MAX 22mΩ@10V 36mΩ@4.5V   ID 8.2A SOP8 FEATURE z TrenchFET Power MOSFET z Low R DS(on) z Low Gate Charge MARKING APPLICATION z Load Switch z PWM applications Equivalent Circuit Q4438 YY Front side Q4438 YY Q4438 = Device code Solid dot=Pin1 indicator Solid dot = Green molding compound device, if none, the normal device YY=Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (note 1) Pulsed Drain Current (note 2) Power Dissipation Thermal Resistance from Junction to Ambient (note 1) Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD RθJA TJ TSTG Value 60 ±20 8.2 40 1.25 100 150 -55~+150 Unit V V A A W ℃/W ℃ ℃ www.cj-elec.com 1 I,May,2015 026)(7(/(&75,&$/&+$5$&7(5,67,&6 Ta =25 Я unless otherwise specified Parameter Symbol Tes...