CJT04N15

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate MOSFETS CJT04N15 V(BR)DSS 150V N-Channel Power MOSFET RDS(on)MAX  160mΩ@10V ID 4A GENERAL DESCRIPTION This CJT04N15 use advanced trench technology and design to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications. SOT-223   1. GATE 2. DRAIN 3. SOURCE 12 3 FEATURE z High density cell design for ultra low RDS(ON) z Fully characterized avalanche voltage and current z Excellent package for good heat dissipation MARKING T04N15 151 T04N15= Device code 151 =Code EQUIVALENT CIRCUIT Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(note1) Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Maximum lead temperure for soldering purposes , 1/8”from case for 5 seconds Symbol VDS VGS ID IDM RθJA TJ TSTG TL Value 150 ±20 4 ...