CJU50N03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU50N03 V(BR)DSS 30 V N-Channel Power MOSFET RDS(on)MAX   11mΩ@10V  16mΩ@5V   ID 50A DESCRIPTION The CJU50N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. TO-252-2L 1. GATE 2. DRAIN 3. SOURCE 2 1 3 FEATURES z High density cell design for ultra low RDS(ON) z Fully characterized Avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation z Special process technology for high ESD capability APPLICATIONS z Power switching application z Hard switched and high frequency circuits z Uninterruptible Power Supply MARKING EQUIV ALENT CIRCUIT CJU50N03 XXX CJU50N03= Device code Solid dot = Green molding compound device, if none, the normal device XXX= Code MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Drain-Source Voltage ...