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CJV01N60 Dataheets PDF



Part Number CJV01N60
Manufacturers ZPSEMI
Logo ZPSEMI
Description N-Channel Power MOSFET
Datasheet CJV01N60 DatasheetCJV01N60 Datasheet (PDF)

CJV01N60 TO-92 Plastic-Encapsulate MOSFETS CJV01N60 N-Channel Power MOSFET General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching ap.

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CJV01N60 TO-92 Plastic-Encapsulate MOSFETS CJV01N60 N-Channel Power MOSFET General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. TO-92 1. GATE 2. DRAIN 3. SOURCE FEATURES z Robust High Voltage Termination z Avalanche Energy Specified z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode z Diode is Characterized for Use i.


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