Document
CJV01N60
TO-92 Plastic-Encapsulate MOSFETS
CJV01N60 N-Channel Power MOSFET
General Description The high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
TO-92
1. GATE 2. DRAIN 3. SOURCE
FEATURES z Robust High Voltage Termination z Avalanche Energy Specified z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode z Diode is Characterized for Use i.