Document
EtronTech
EM6AB080
Etron Confidential
64M x 8 bit DDR Synchronous DRAM (SDRAM)
Advanced (Rev. 1.1, Dec. /2013)
Features
• Fast clock rate: 250/200MHz
• Differential Clock CK & CK
• Bi-directional DQS • DLL enable/disable by EMRS • Fully synchronous operation • Internal pipeline architecture • Four internal banks, 16M x 8-bit for each bank • Programmable Mode and Extended Mode registers
- CAS Latency: 2, 2.5, 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
• Individual byte write mask control • DM Write Latency = 0 • Auto Refresh and Self Refresh • 8192 refresh cycles / 64ms • Precharge & active power down • Power supplies: VDD & VDDQ = 2.5V 0.2V • Interface: SSTL_2 I/O Interface • Package: 66 Pin TSOP II, 0.65mm pin pitch
- Pb and Halogen free
• Package: 60-Ball, 8x13x1.2 mm (max) TFBGA - Pb free and Halogen Free
Overview
The EM6AB080 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 512 Mbits. It is internal.