IRF1407SPbF

IRF1407SPbF IRF1407LPbF Benefits  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1407L) is available for low-profile applications. HEXFET® Power MOSFET VDSS RDS(on) ID 75V 0.0078 100A D D S G D2 Pak IRF1407SPbF S GD TO-262 Pak IRF1407LPbF G Gate D Drain S Source Base part number IRF1407LPbF IRF1407SPbF Package Type TO-262 D2-Pak Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Orderable Part Number IRF1407LPbF (Obsolete) IRF1407STRLPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Dr...