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IRF1407LPbF Dataheets PDF



Part Number IRF1407LPbF
Manufacturers Infineon
Logo Infineon
Description Power MOSFET
Datasheet IRF1407LPbF DatasheetIRF1407LPbF Datasheet (PDF)

IRF1407SPbF IRF1407LPbF Benefits  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well .

  IRF1407LPbF   IRF1407LPbF


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