Document
Applications l Reset Switch for Active Clamp
Reset DC-DC converters
SMPS MOSFET
PD - 95863
IRF6218S
IRF6218L
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
:-150V 150m @VGS = -10V -27A
Benefits l Low Gate to Drain Charge to Reduce
Switching Losses l Fully Characterized Capacitance Including
Effective COSS to Simplify Design (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
G
D
D2Pak
TO-262
S IRF6218S IRF6218L
Absolute Maximum Ratings
Parameter VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
cIDM Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
dv/dt TJ TSTG
Linear Derating Factor
hPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
gRθJC
Junction-to-Case
RθJA
ghJunction-to-Ambient (PCB Mounted, steady state)
Max. -150 ± 20 -27 -.