Power MOSFET
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repe...
Description
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Multiple Package Options Lead-Free
IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF
HEXFET® Power MOSFET
VDSS
100V
RDS(on)
18m
ID 42A
D D
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
SS G GD
D- Pak IRFR3710ZPbF
I- Pak IRFU3710ZPbF
I-Pak Lead form 701 IRFU3710Z-701PbF Refer to page 11 for package outline
G Gate
D Drain
S Source
Base part number IRFU3710ZPbF IRFR3710ZPbF
Package Type I-Pak
D-Pak
Standard Pack Form Tube Tube Tape an...
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