IRFU3710Z-701PbF

  Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Multiple Package Options  Lead-Free IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET® Power MOSFET   VDSS 100V RDS(on) 18m ID 42A D D Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. SS G GD D- Pak IRFR3710ZPbF I- Pak IRFU3710ZPbF I-Pak Lead form 701 IRFU3710Z-701PbF Refer to page 11 for package outline G Gate D Drain S Source Base part number IRFU3710ZPbF IRFR3710ZPbF Package Type I-Pak D-Pak Standard Pack Form Tube Tube Tape an...