708SRAP-R-AU-01 chip Datasheet

708SRAP-R-AU-01 Datasheet, PDF, Equivalent


Part Number

708SRAP-R-AU-01

Description

AlGaInP Red LED chip

Manufacture

ETC

Total Page 1 Pages
Datasheet
Download 708SRAP-R-AU-01 Datasheet


708SRAP-R-AU-01
AlGaInP Red LED chip
Features:
(1) High luminous intensity
(2) Long operation life
(3) 100% probing test
(4) Low driving current applications
Characteristics:
(1) Size
Chip Size: 8 mil x 8 mil (203±25 µm x 203±25 µm)
Chip Thickness: 7 mil (180±25µm ) typical
Bonding Pad: 6 mil (152±10 µm) in diameter
(2) Metallization:
P electrodeAu pad
N electrodeAu alloy
(3) Structure:
Refer to drawing
Type:
708SRAP-R-AU-01
1.6 0.8
unit: mil
6 78
P-electrode
AlGaInP epilayers
n-GaAs sub.
7
N-electrode
Electro-optical characteristics:
Parameter
Symbol Condition Min. Typ. Max. Unit
Forward voltage
Vf1 If = 10uA 1.25
Vf2 If = 6.3mA ---
---
2.0
---
2.4
V
V
Reverse voltage
Vr
Ir =10uA
9
---
---
V
Dominant wavelength(1)
λ p If = 6.3mA 650
---
685 nm
Luminous intensity(2)(3)
Po A If=6.3mA 0.016
---
0.036 mW
(1) Basically, wavelength uniformity is λd±5nm; however, customers’ special requirements are also welcome.
(2) Customer’s special requirements are also welcome.
(3) Luminous intensity is measured by EPISTAR’s equipment on bare chips.
Hints: Bonding temperature => Do not apply over 280on chip for 10 seconds.
CC-200805-B
This product is made and sold under one or more of the following patents: Taiwan Patent Certificate Nos.: 098998; 113696; 128153; 131010; 144415;
148677; 170789; 183481; 183846; U.S. Patent Nos.: 5,008,718; 5,164,798; 5,233,204; 5,789,768; 6,078,064; 6,057,562; 6,225,648; 6,552,367;
6,876,005, and any foreign counterparts.


Features AlGaInP Red LED chip Features: (1) High luminous intensity (2) Long operation l ife (3) 100% probing test (4) Low drivi ng current applications Characteristics : (1) Size Chip Size: 8 mil x 8 mil (20 3±25 µm x 203±25 µm) Chip Thickness : 7 mil (180±25µm ) typical Bonding P ad: 6 mil (152±10 µm) in diameter (2) Metallization: P electrode:Au pad N electrode:Au alloy (3) Structure: Ref er to drawing Type: 708SRAP-R-AU-01 1 .6 0.8 unit: mil 6 78 P-electrode AlG aInP epilayers n-GaAs sub. 7 N-electr ode Electro-optical characteristics: Parameter Symbol Condition Min. Typ. M ax. Unit Forward voltage Vf1 If = 10u A 1.25 Vf2 If = 6.3mA --- --2.0 --2.4 V V Reverse voltage Vr Ir =10uA 9 --- --- V Dominant wavelength(1) λ p If = 6.3mA 650 --- 685 nm Lumin ous intensity(2)(3) Po A If=6.3mA 0.01 6 --- 0.036 mW (1) Basically, wavele ngth uniformity is λd±5nm; however, c ustomers’ special requirements are al so welcome. (2) Customer’s special requirements are also welc.
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