HCS70R350E

HCS70R350E Super Junction MOSFET July 2016 HCS70R350E 700V N-Channel Super Junction MOSFET Features  Very Low FOM (RDS(on) X Qg)  Extremely low switching loss  Excellent stability and uniformity  100% Avalanche Tested  Higher dv/dt ruggedness Application  Lighting  Hard Switching PWM  Server Power Supply  Charger Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 750 12 0.35 16 Unit V A Ω nC Package & Internal Circuit TO-220F G D S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS dv/dt dv/dt PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) MOSFET dv/dt ruggedness, VDS=0…480V Reverse diode dv/dt, VDS=0…480V, IDS≤ID Power Dissipation Operating and Storage Temperature Range Maximum lead temperatu...