HCS80R250T

HCS80R250T Super Junction MOSFET August 2016 HCS80R250T 800V N-Channel Super Junction MOSFET Description ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 18 0.25 58 Unit V A ȍ nC Features ‰ Switch Mode Power Supply (SMPS) ‰ Uninterruptible Power Supply (UPS) ‰ Power Factor Correction (PFC) ‰ Motor Control & LED Lighting Power ‰ DC-DC Converters Package & Internal Circuit TO-220F G D S Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS IAR EAR dv/dt dv/dt PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) MOSFET dv/dt ruggedness, V...