HRLO60N06H

HRLO60N06H Dec 2016 HRLO60N06H 60V N-Channel Trench MOSFET Features  High Speed Power Switching, Logic Level  Enhanced Body diode dv/dt capability  Enhanced Avalanche Ruggedness  100% UIS Tested, 100% Rg Tested  Lead free, Halogen Free Application  Synchronous Rectification in SMPS  Hard Switching and High Speed Circuit  DC/DC in Telecoms and Industrial Key Parameters Parameter BVDSS ID RDS(on), typ @10V RDS(on), typ @4.5V Value 60 17 4.5 5.8 Unit V A mΩ mΩ Package & Internal Circuit SOP-8 Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TA = 25℃ TA = 100℃ Single Pulsed Avalanche Energy L=1mH Power Dissipation TA = 25℃ TA = 70℃ Operating and Storage Temperature Range 60 ±20 17 11 90 80 3.1 2.0 -55 to +150 Units V V A A A mJ W W ℃ Thermal Resistance Characteristics Symbol Parameter R...