HRP40N08K

HRP40N08K HRP40N08K 80V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 190nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 3 mΩ (Typ.) @VGS=10V  100% Avalanche Tested Jan 2015 BVDSS = 80 V RDS(on) typ = 3 mΩ ID = 180 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25℃) - Derate above 25℃ 80 180 126 630 ±25 1400 25 250 1.67 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +...