RG2006LN

Ordering number : ENA1434 RG2006LN SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF High-Speed Switching Diode Features High breakdown voltage (VRRM=600V). High reliability. One-point fixing type plastic mold package facilitating easy mounting and heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Peak Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IOP IFSM Tj Tstg Electrical Characteristics at Ta=25°C Conditions PW≤100μs, duty cycle≤50% Sine wave, 10ms Ratings 600 600 20 40 180 150 --55 to +150 Unit V V A A A °C °C Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF1 VF2 IR trr1 trr2 Rth(j-c) Conditions I...