JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
3CG751 TRANSISTOR (PNP)
TO...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate
Transistors
3CG751
TRANSISTOR (
PNP)
TO-92MOD
FEATURE y High power amplifier y Low VCE(sat)
1.EMITTER 2.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
3.BASE
VCBO
Collector-Base Voltage
-30 V
VCEO
Collector-Emitter Voltage
-30 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current -Continuous
-1.5 A
PC Collector Power Dissipation
0.9 W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55 to +150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat)
fT Cob
IC= -100µA, IE=0 ...
