JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3DA882 TRANSISTOR (NPN)
TO –...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate
Transistors
3DA882
TRANSISTOR (
NPN)
TO – 126
FEATURES z Low Speed Switching z Complement to 3CA772
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value 40 30 6 3 1.25 100 150
-55~+150
1. BASE
2. COLLECTOR
3. EMITTER
Unit V V V A W
℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO
IC=100µA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA,IC=0
Collector cut-off current
ICBO
VCB=40V,IE=0
Collector cut-off current
ICEO
VCE=30V,IB=0
Emitter cut-off current DC current ...
