3DG101, 3DG110, 3DG111
NPN Silicon High Frequency Low Power Transistor
Features: 1. Using epitaxy planar technology str...
3DG101, 3DG110, 3DG111
NPN Silicon High Frequency Low Power
Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source
adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Specifications
(Ta = 25°C )
Parameter name
Symbols Unit
3DG101
3DG110
3DG111
C-B Breakdown Voltage V(BR)CBO V
C-E Breakdown Voltage V(BR)CEO V
E-Base Breakdown Voltage V(BR)EBO V
Total Dissipation
Ptot mW
Max. Collector Current ICM mA
Junction Temperature
Tjm °C
Storage Temperature
Tstg °C
ABC
20 30 40
15 20 30
≥4 (IE=0.1mA) 100 (Ta=25°C)
20
DE
20 30
15 20
≥4 (IE=0.1mA) 300 (Ta=25°C)
50 175 -55~+175
F Test Condition
40 IC=0.1mA
30
≥4 (IE=0.1mA) 300 (Ta=25°C)
50
Collector- Emitter
VCE(sat) V
Saturation Voltage Drop
0.35 (IC=10mA, IB=1mA)
...
