Document
Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DG140
NPN Silicon High Frequency Low Power Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source
adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Parameter name
Symbols Unit
Total Dissipation Max. Collector Current Junction Temperature Storage Temperature C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage
Collector- Emitter Saturation Voltage Drop Base- Emitter Saturation
Voltage Drop C-E Leakage Current E-B Leakage Current
DC Current Gain
Ptot ICM Tjm Tstg V(BR)CBO V(BR)CEO V(BR)EBO
VCE(sat)
VBE(sat)
ICEO IEBO hFE
mW mA °C °C V V V
V
V
uA uA
Transition frequency
fT MHz
Specifications
100 15 175 -55~+175
20 15
4
0.35
1.0
0.1 0.