3DG182
NPN Silicon High Reverse Voltage High Frequency
Middle Power Transistor
Features: 1. Using epitaxy planar techno...
3DG182
NPN Silicon High Reverse Voltage High Frequency
Middle Power
Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source
adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
(Ta = 25°C )
Parameter name
Specifications Symbols Unit
ABCDE FGH I
J
Test Condition
Total Dissipation
Ptot mW
700
Ta=25°C
Max. Collector Current ICM mA
300
Junction Temperature Tjm °C
175
Storage Temperature Tstg °C
-55~+175
C-B Breakdown Voltage V(BR)CBO V 60 100 140 180 220 60 100 140 180 220 C-E Breakdown Voltage V(BR)CEO V 60 100 140 180 220 60 100 140 180 220
IC=0.1mA
E-B Breakdown Voltage V(BR)EBO V
5
IE=0.1mA
Collector- Emitter
VCE(sat) V
Saturation Voltage Drop
1.0
IC=200mA,
Base- Emitter Saturation
VBE(sat) V
Voltage Drop
1.2...
