INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3514
DESCRIPTION ·High Collector-...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SC3514
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1383
APPLICATIONS ·Adudio frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
180 V
VCEO Collector-Emitter Voltage
180 V
VEBO Emitter-Base Voltage
5.0 V
IC Collector Current-Continuous
0.1 A
Collector Power Dissipation@ Ta=25℃
1.5
PC
Collector Power Dissipation@TC=25℃
10
W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc Website：www.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SC3514
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA
VBE(sat) Base...
