2SC3514. C3514 Datasheet

C3514 2SC3514. Datasheet pdf. Equivalent


Part C3514
Description 2SC3514
Feature INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3514 DESCRIPT.
Manufacture Inchange Semiconductor
Datasheet
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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc C3514 Datasheet
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C3514
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3514
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min)
·Good Linearity of hFE
·Complement to Type 2SA1383
APPLICATIONS
·Adudio frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
180 V
VCEO Collector-Emitter Voltage
180 V
VEBO Emitter-Base Voltage
5.0 V
IC Collector Current-Continuous
0.1 A
Collector Power Dissipation@ Ta=25
1.5
PC
Collector Power Dissipation@TC=25
10
W
TJ Junction Temperature
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
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C3514
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3514
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 50mA; IB= 5mA
ICBO Collector Cutoff Current
VCB= 180V; IE= 0
IEBO Emitter Cutoff Current
VEB= 3.0V; IC=0
hFE-1
DC Current Cain
IC= 1mA; VCE= 5V
hFE-2
DC Current Cain
IC= 10mA; VCE= 5V
fT Current-Gain—Bandwidth Product IC= 20mA; VCE= 10V
COB Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
MIN TYP. MAX UNIT
0.5 V
1.5 V
1.0 μA
1.0 μA
90
100 320
200 MHz
3.2 pF
‹ hFE-2 Classifications
QP
100-200 160-320
isc Websitewww.iscsemi.cn
2
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