CJA03N10

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA03N10 N-Channel MOSFET V(BR)DSS 100 V RDS(on)MAX 14  0mΩ@ 10V  ID 3A SOT-89-3L DESCRIPTION The CJA03N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is suitable for use in a wide variety of applications. 1. GATE 2. DRAIN 3. SOURCE FEATURES z Lead free product is acquired z Special process technology for high ESD capability z High density cell design for ultra low RDS(on) z Good stability and uniformity with high EAS z Excellent package for good heat dissipation APPLICATION z Power switching application z Hard switching and high frequency circuits z Uninterruptible power supply MARKING Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (note 1) Power Dissipation Thermal Resistance from Junction to Ambi...