P- & N-Channel MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL6601 P-channel and N-channe...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL6601 P-channel and N-channel Complementary MOSFETS
GENERAL DESCRIPTION The CJL6601 uses advanced trench technology to provide excellent RDS(on)
and low gate charge. The complementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications.
SOT-23-6L
Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
N-channel VDS 30
P-channel -30
V
Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current (2)
VGS ±12 ID 3.4 IDM 30
±12 -2.3 -30
V A A
Power Dissipation
PD 0.35
0.35 W
Thermal Resistance from Junction to Ambient(1)
RθJA
357
357 ℃/W
Junction Temperature
TJ 150
150 ℃
Storage Temperature
Tstg -55~+150
-55~+150
℃
1.The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with
TA =25°C. The value in any given appli...
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