JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23-6L Plastic-Encapsulate Transistors
CJL818C TRANSISTOR (PNP)
D...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23-6L Plastic-Encapsulate
Transistors
CJL818C
TRANSISTOR (
PNP)
DESCRIPTIONS The device is manufactured in low voltage
PNP Planar Technology with
"Base Island layout. The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
SOT-23-6L
FEATURE Very low collector to emitter saturation voltage
APPLICATIONS z Power management in portable equipments
z Switching
regulator in battery charge applications
MARKING: 6
818C
1
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
ICM Collector Current -Pulsed
PC Collector Power Dissipation
RθJA
Thermal Resistance from Junction to Ambient
Ptot Total Dissipation at TC = 25℃ (note 1)
RθJC
Thermal Resistance from Junction to Case (note 1)
TJ Junction Temperature
Tstg Storage Temperature Note 1...