CJL2301

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL2301 Dual P-Channel MOSFET V(BR)DSS -20V RDS(on)MAX   90mΩ@-4.5V  125mΩ@-2.5V   200mΩ@-1.8V   ID -2.3A SOT-23-6L FEATURE  TrenchFET Power MOSFET  Equivalent to Two CJ2301   APPLICATION  DC/DC converter  Load switch for portable devices   MARKING Equivalent Circuit PIN1 ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD RθJA TJ TSTG Value -20 ±8 -2.3 -10 0.35 357 150 -55~ 150 Unit V V A A W ℃/W ℃ ℃ www.cj-elec.com 1 E,Aug,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Symbol Test Condition STATIC PARAMETERS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA Zero ...