JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL3407 P-Channel Enhancement ...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL3407 P-Channel Enhancement Mode Field Effect
Transistor
V(BR)DSS
-30V
RDS(on)MAX
\60mΩ@-10 V 87mΩ@-4.5V
ID
-4.1A
General Description The CJL3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.
SOT-23-6L
MARKING: R7
Equivalent Circuit
PIN1
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
Symbol
VDS VGS ID PD RθJA TJ Tstg
Value
-30 ±20 -4.1 350 357 150 -55~+150
Unit
V V A
mW ℃/W
℃ ℃
www.cj-elec.com
1
D,Aug,2015
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Static characteristics Drain-source breakdown voltage Zero gate v...
