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CJP07N65 Dataheets PDF



Part Number CJP07N65
Manufacturers JCET
Logo JCET
Description N-Channel MOSFET
Datasheet CJP07N65 DatasheetCJP07N65 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP07N65 V(BR)DSS 650V N-Channel Power MOSFET RDS(on)MAX   1.3Ω@10V ID 7.4A TO-220-3L   GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, powe.

  CJP07N65   CJP07N65


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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP07N65 V(BR)DSS 650V N-Channel Power MOSFET RDS(on)MAX   1.3Ω@10V ID 7.4A TO-220-3L   GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE 2. DRAIN 3. SOURCE FEATURE  High Current Rating  Lower RDS(on)  Lower Capacitance  Lower Total Gate Charge  Tighter VSD Specifications  Avalanche Energy Specified  Fast Switching Capability MARKING EQUIVALENT CIRCUIT CJP07N65= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code 123 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Vol.


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