Document
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP07N65
V(BR)DSS
650V
N-Channel Power MOSFET
RDS(on)MAX
1.3Ω@10V
ID
7.4A
TO-220-3L
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor controls and bridge circuits.
1. GATE 2. DRAIN 3. SOURCE
FEATURE High Current Rating Lower RDS(on) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Fast Switching Capability
MARKING
EQUIVALENT CIRCUIT
CJP07N65= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code
123
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Vol.