N-Channel MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L-C Plastic-Encapsulate MOSFETS
CJP50N06
V(BR)DSS
60V
N-Cha...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L-C Plastic-Encapsulate MOSFETS
CJP50N06
V(BR)DSS
60V
N-Channel Power MOSFET
RDS(on)MAX
20mΩ@10V
ID
50A
TO-220-3L-C
GENERAL DESCRIPTION
The CJP50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURE z High density cell design for ultra low Rdson z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation z Special process technology for high ESD capability
APPLICATION z Power switching application z Hard switched and high frequency circuits z Uninterruptible power supply
1. GATE 2. DRAIN 3. SOURCE
MARKING
EQUIVALENT CIRCUIT
123
CJP50N06 XXX
GD S
CJP50N06= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-So...
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