CJP55H12

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP55H12 N-Channel Power MOSFET TO-220-3L-C GENERAL DESCRIPTION The CJP55H12 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. FEATURE  High density cell design for ultra low Rdson  Fully characterized avalanche voltage and current  Good stability and uniformity with high EAS  Excellent package for good heat dissipation  Special process technology for high ESD capability 1. GATE 2. DRAIN 3. SOURCE APPLICATION  Power switching application  Hard switched and high frequency circuits  Uninterruptible power supply Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy (note1) Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperatu...