CJPF04N70

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N70 V(BR)DSS 700V N-Channel Power MOSFET RDS(on)MAX   2.8Ω@10V ID 4.4A TO-220F   GENERAL DESCRIPTION This is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURE z High Current Rating z Lower RDS(on) z Lower Reverse Transfer Capacitance z Ultra Low Gate Charge z Avalanche Energy Specified z High Switching Speed 1. GATE 2. DRAIN 3. SOURCE MARKING EQUIVALENT CIRCUIT CJPF04N70 XXX CJPF04N70= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code 123 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Cur...