N-Channel MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF05N60 N-Channel Power MOSFE...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF05N60 N-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX
ID
600V
2.5Ω@10V
4.5A
Description This advanced high voltage MOSFET is designed to withstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode with fast
recovery time.
Designed for high voltage, high speed switching applications
such as power suplies, converters, power motor controls and bridge
circuits.
TO-220F
1. GATE 2. DRAIN 3. SOURCE
123
FEATURES z Low RDS(on) z Lower Capacitances z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified
MARKING
EQUIVALENT CIRCUIT
CJPF05N60
XXX
CJPF05N60= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage Continuous Drain Current Single Pu...
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