CJPF05N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF05N65 N-Channel Power MOSFET V(BR)DSS 650V RDS(on)MAX   2.4Ω@10V ID 5A GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. TO-220F 1. GATE 2. DRAIN 123 3. SOURCE FEATURE  High Current Rating  Lower RDS(on)  Lower Capacitance  Lower Total Gate Charge  Tighter VSD Specifications  Avalanche Energy Specified  Fast Switching Capability MARKING EQUIVALENT CIRCUIT CJPF05N65 XXX CJPF05N65 = Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gat...