N-Channel MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF08N60
V(BR)DSS
600V
N-Chann...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF08N60
V(BR)DSS
600V
N-Channel Power MOSFET
RDS(on)MAX
1.3Ω@10V
ID
8A
TO-220F
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor controls and bridge circuits.
1. GATE 2. DRAIN 3. SOURCE
FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified
MARKING
EQUIVALENT CIRCUIT
123
CJPF08N60
XXX
CJPF08N60= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current ...
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