N-Channel MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF10N65
V(BR)DSS
650V
N-Chann...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF10N65
V(BR)DSS
650V
N-Channel Power MOSFET
RDS(on)MAX
1.0Ω@10V
ID
10A
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
TO-220F
1. GATE 2. DRAIN 3. SOURCE
123
FEATURE z High Current Rating z Low Gate Charge z Lower RDS(on) z Low Reverse Transfer Capacitance z Fast Switching Capability z Tighter VSD Specifications z Avalanche Energy Specified
MARKING
EQUIVALENT CIRCUIT
CJPFN6
XXX
CJPF10N65= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Sour...
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