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CJPF12N65 Dataheets PDF



Part Number CJPF12N65
Manufacturers JCET
Logo JCET
Description N-Channel MOSFET
Datasheet CJPF12N65 DatasheetCJPF12N65 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF12N65 V(BR)DSS 650V N-Channel Power MOSFET RDS(on)MAX   0.85Ω@10V ID   12A TO-220F   GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, powe.

  CJPF12N65   CJPF12N65


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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF12N65 V(BR)DSS 650V N-Channel Power MOSFET RDS(on)MAX   0.85Ω@10V ID   12A TO-220F   GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE z High Current Rating z Lower RDS(on) z Low Reverse Transfer Capacitance z Fast Switching Capability z Tighter VSD Specifications z Avalanche Energy Specified 1. GATE 2. DRAIN 3. SOURCE MARKING CJPF12N65= Device code Soli d dot = Green molding compound device, if none, the normal device XXX=Date Code Equivalent Circuit 123 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain .


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