Document
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF12N65
V(BR)DSS
650V
N-Channel Power MOSFET
RDS(on)MAX
0.85Ω@10V
ID
12A
TO-220F
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high speed switching
applications such as power supplies, converters, power motor controls and bridge circuits.
FEATURE z High Current Rating z Lower RDS(on) z Low Reverse Transfer Capacitance z Fast Switching Capability z Tighter VSD Specifications z Avalanche Energy Specified
1. GATE 2. DRAIN 3. SOURCE
MARKING
CJPF12N65= Device code Soli d dot = Green molding compound device,
if none, the normal device XXX=Date Code
Equivalent Circuit
123
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain .