CJPF55P30

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF55P30 V(BR)DSS -55V P-Channel Power MOSFET RDS(on)MAX   40mΩ@-10V ID -30A TO-220F   DESCRIPTION The CJPF55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. 1. GATE 2. DRAIN 3. SOURCE FEATURES z High density cell design for ultra low RDS(ON) z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation APPLICATIONS z Power switching application z Hard switched and high frequency circuits z Uninterruptible Power Supply(UPS) MARKING EQUIVALENT CIRCUIT 123 CJPF55P30 XXX CJPF55P30= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Curre...