MGF65A3H

VCE = 650 V, IC = 30 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A3H, MGF65A3H, FGF65A3H Data Sheet Description Packages The KGF65A3H, MGF65A3H, and FGF65A3H are 650 V Field Stop IGBTs. Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction. Thus, these Field Stop IGBTs can improve the efficiency of your circuit. TO247-3L (4) TO3P-3L (4) Features ● Low Saturation Voltage ● High Speed Switching ● With Integrated Fast Recovery Diode ● RoHS Compliant (1) (2) (3) TO3PF-3L (1) (2) (3) ● VCE ------------------------------------------------------ 650 V ● IC (TC = 100 °C) ----------------------------------------- 30 A ● Short Circuit Withstand Time ----------------------- 10 μs ● VCE(sat)-----------------------------------------------1.9 V typ. ● tf (TJ = 175 °C) ------------------------------------ 60 ns typ. ● VF----------------------------------------------------1.8 V typ. Applications ● Welding Converters ● PFC Circuit (1) (2) (3) (1) (2)(4) (1) Gate (2) Collector (3) Emitter (4) Collector (3) Selection Guide Part Number KGF65A3H MGF65A3H FGF65A3H Not to scale Package TO247-3L TO3P-3L TO3PF-3L xGF65A3H-DSE Rev.1.5 SANKEN ELCTRIC CO., LTD. 1 Feb. 19, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2016 KGF65A3H, MGF65A3H, FGF65A3H Absolute Maximum Ratings Unless otherwise specified, TA = 25 °C Parameter Collector to Emitter Voltage Gate to Emitter Voltage Symb...