IPP029N06N

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V IPP029N06N DataSheet Rev.2.6 Final PowerManagement&Multimarket 1Description Features OptimizedforhighperformanceSMPS,e.g.sync.rec. 100%avalanchetested Superiorthermalresistance N-channel QualifiedaccordingtoJEDEC1)fortargetapplications Pb-freeleadplating;RoHScompliant Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 2.9 mΩ ID 100 A QOSS 65 nC QG(0V..10V) 56 nC OptiMOSTMPower-Transistor,60V IPP029N06N TO-220-3 tab Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPP029N06N Package PG-TO220-3 Marking 029N06N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.6,2015-02-10 OptiMOSTMPower-Transistor,60V IPP029N06N TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . ....