DatasheetsPDF.com

IPP114N12N3G

Infineon

Power-Transistor


Description
OptiMOSTM3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID 175 °C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target application Ideal for high-frequency switching...


Infineon

IPP114N12N3G

File Download Download IPP114N12N3G Datasheet


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)