STD8N60DM2

STD8N60DM2 Datasheet N-channel 600 V, 550 mΩ typ., 8 A, MDmesh DM2 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS RDS(on) max. ID STD8N60DM2 600 V 600 mΩ 8A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected PTOT 85 W Applications Switching applications Description AM01476v1_tab This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STD8N60DM2 Product summary Order code STD8N60DM2 Marking 8N60DM2 Package DPAK Packing Tape and reel DS11054 - Rev 4 - May 2023 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range Tj Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. IS...