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STGWT40HP65FB Dataheets PDF



Part Number STGWT40HP65FB
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description IGBT
Datasheet STGWT40HP65FB DatasheetSTGWT40HP65FB Datasheet (PDF)

STGWT40HP65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB TO-3P 3 2 1 Figure 1: Internal schematic diagram Features  Maximum junction temperature: TJ = 175 °C  Minimized tail current  VCE(sat) = 1.6 V (typ.) @ IC = 40 A  Tight parameter distribution  Co-packed diode for protection  Safe paralleling  Low thermal resistance Applications  Power factor corrector (PFC) Description This device is an IGBT developed using an advanced propr.

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STGWT40HP65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB TO-3P 3 2 1 Figure 1: Internal schematic diagram Features  Maximum junction temperature: TJ = 175 °C  Minimized tail current  VCE(sat) = 1.6 V (typ.) @ IC = 40 A  Tight parameter distribution  Co-packed diode for protection  Safe paralleling  Low thermal resistance Applications  Power factor corrector (PFC) Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Order code STGWT40HP65FB Table 1: Device summary Marking GWT40HP65FB Package TO-3P Packing Tube July 2016 Doc.


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