Document
STGWT40HP65FB
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
Datasheet - production data
TAB
TO-3P
3 2 1
Figure 1: Internal schematic diagram
Features
Maximum junction temperature: TJ = 175 °C Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameter distribution Co-packed diode for protection Safe paralleling Low thermal resistance
Applications
Power factor corrector (PFC)
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Order code STGWT40HP65FB
Table 1: Device summary Marking
GWT40HP65FB
Package TO-3P
Packing Tube
July 2016
Doc.