STL33N60DM2

STL33N60DM2 N-channel 600 V, 0.115 Ω typ., 21 A MDmesh™ DM2 Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data 5 4 32 1 PowerFLAT™ 8x8 HV Figure 1: Internal schematic diagram Features Order code STL33N60DM2 VDS @ TJmax 650 V RDS(on)max 0.140 Ω ID 21 A  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Order code STL33N60DM2 Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Marking Package Packaging 33N60DM2 PowerFLAT™ 8x8 HV Tape and reel March 2016 DocID026781 Rev 2 ...