N-Channel Silicon MOSFET
Ordering number : ENA1174
ECH8601M
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH8601M General-Purpose ...
Description
Ordering number : ENA1174
ECH8601M
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH8601M General-Purpose Switching Device
Applications
Features
Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD PT Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1000mm2✕0.8mm) 1unit When mounted on ceramic substrate (1000mm2✕0.8mm)
Ratings 24
±12 8
60 1.5 1.6 150 --55 to +150
Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutof...
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