ECH8601M

Ordering number : ENA1174 ECH8601M SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8601M General-Purpose Switching Device Applications Features Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1000mm2✕0.8mm) 1unit When mounted on ceramic substrate (1000mm2✕0.8mm) Ratings 24 ±12 8 60 1.5 1.6 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutof...